Exclusive

Publication

Byline

Location

US Patent Issued to UNIST (Ulsan National Institute of Science and Technology), Postech Research and Business Development Foundation on July 28 for "Non-volatile memory device and operating method of the same" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,455, issued on July 28, was assigned to UNIST (Ulsan National Institute of Science and Technology) (Ulsan, South Korea) and Postech Research... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Ferroelectric-based memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,456, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Ferroelectric-based memory devi... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Three-dimensional semiconductor memory device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,457, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional semiconductor memory devic... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 28 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,458, issued on July 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor structure and manufacturing method... Read More


US Patent Issued to International Business Machines on July 28 for "Backside MRAM with frontside devices" (New Hampshire, New York, Vermont Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,459, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Backside MRAM with frontside devices" was in... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Memory device including a semiconducting metal oxide FIN transistor and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,460, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device including a semicondu... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Integrated circuit device and electronic system including the same" (South Korean Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,461, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device and electronic sys... Read More


US Patent Issued to KIOXIA on July 28 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,462, issued on July 28, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor device and method for manufacturing the same" was invented by ... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Integrated circuit with thin film resister structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,463, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Integrated circuit with thin fi... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,464, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of ... Read More